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| 2N5109UB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5109UBJ) * JANTX level (2N5109UBJX) * JANTXV level (2N5109UBJV) * JANS level (2N5109UBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose * VHF-UHF amplifier transistor * NPN silicon transistor Features * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 1009 Reference document: MIL-PRF-19500/453 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Rating 20 40 3 400 1 5.71 2.9 16.6 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/C W mW/C C/W C C RJA TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5109UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current On Characteristics Parameter DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Power Gain (narrow band) current Cross Modulation Noise Figure Voltage Gain (wideband) Symbol |hFE1| |hFE2| |hFE3| COBO GPE cm NF G Test Conditions VCE = 15 Volts, f = 200 MHz, IC = 25 mA IC = 50 mA IC = 100 mA VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCC = 15 Volts, IC = 50 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 54 dB output VCC = 15 Volts, IC = 10 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 50 MHz < f < 216 MHz, Pin = -10dB Min 5 6 5 Typ Max 10.0 11.0 10.5 3.5 11 -57 3.5 11 pF dB dB dB dB Units Symbol hFE1 hFE2 VCEsat Test Conditions IC = 50 mA, VCE = 15 Volts IC = 50 mA, VCE = 5 Volts TA = -55C IC = 100 mA, IB = 10 mA Symbol V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICEO1 ICEO2 Test Conditions IC = 100 A IC = 5 mA IC = 5 mA, RBE = 10 IE = 100 A VCE = 15 Volts VCE = 15 Volts, TA = 175C Min 40 20 40 3 20 5 Typ Max Units Volts Volts Volts Volts A mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Min 40 15 Typ Max 150 Units 0.5 Volts Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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